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參數(shù)資料
| 型號： | 2SB1104 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused(三倍擴散PNP晶體管) |
| 中文描述： | 三重擴散硅進步黨（三倍擴散進步黨晶體管） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SB1104 |
2SB1103, 2SB1104
3
Typical Output Characteristics
I
B
= 0
–0.5 mA
–1.0
–1.5
–10
–8
–6
–4
–2
0
–1
C
C
–2
Collector to emitter voltage V
CE
(V)
–3
–5
–4
P
C
= 40 W
–2.5
–30
–2.0
T
C
= 25
°
C
DC Current Transfer Ratio vs.
Collector Current
30,000
10,000
3,000
1,000
300
100
30
–0.1
–0.3
Collector current I
C
(A)
D
F
–1.0
–3
–10
V
= –3 V
Pluse
Ta = 75
°
C
–25
°
C
25
Saturation Voltage vs.
Collector Current
T
= 25
°
C
Pulse
–10
–3
–1.0
–0.3
C
C
B
B
–0.03
–0.1
–0.01
–0.1
Collector current I
C
(A)
–0.3
–1.0
–3
–10
V
BE(sat)
V
CE(sat)
500
500
200
I
C
/
I
B
= 200
Switching Time vs. Collector Current
S
μ
s
10
3
1.0
0.3
0.1
0.03
0.01
–0.1
–0.3
Collector current I
C
(A)
–1.0
–3
–10
t
f
t
on
t
stg
V
CC
= –30V
I
C
= 100 I
B1
= –100 I
B2
Ta = 25
°
C
Transient Thermal Resistance
10
3
1.0
0.3
0.1
0.03
0.01
1
10
100
1,000
1
10
100
1,000
(s)
(ms)
Time t
T
θ
j
°
C
T
C
= 25
°
C
1 s–1,000 s
1 ms–1 s
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PDF描述 |
|---|---|
| 2SB1109 | Silicon PNP Epitaxial(外延PNP晶體管) |
| 2SB1110 | Silicon PNP Epitaxial(外延PNP晶體管) |
| 2SB1114 | PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
| 2SB1115 | FILTER PLATE |
| 2SB1115A | FILTER PLATE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1105 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB -120V -3A 30W BCE |
| 2SB1106 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB -120V -6A 40W BCE |
| 2SB1108 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Medium Speed Switching Complementary Pair with 2SD1608 |
| 2SB1109 | 制造商:Hitachi 功能描述:Bipolar Junction Transistor, PNP Type, TO-126 |
| 2SB1109B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
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