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參數(shù)資料
| 型號(hào)： | 2SB1104 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨（三倍擴(kuò)散進(jìn)步黨晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 38K |
| 代理商： | 2SB1104 |
2SB1103, 2SB1104
2
Electrical Characteristics
(Ta = 25
q
C)
2SB1103
2SB1104
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
–60
—
—
–80
—
—
V
I
C
= –25 mA, R
BE
=
f
Emitter to base
breakdown voltage
V
(BR)EBO
–7
—
—
–7
—
—
V
I
E
= –50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
—
—
–100
—
—
–100
P
A
V
CB
= –60 V, I
E
= 0
V
CE
= –50 V, R
BE
=
f
V
CE
= –3 V, I
C
= –4
A*
—
—
–10
—
—
–10
P
A
DC current tarnsfer
ratio
1000 —
20000
1000 —
20000
1
Collector to emitter
saturation voltage
V
CE(sat)1
—
—
–1.5
—
—
–1.5
V
I
= –4 A, I
B
= –8
mA*
1
V
CE(sat)2
—
—
–3.0
—
—
–3.0
I
= –8 A, I
B
= –80
mA*
1
Base to emitter
saturation voltage
V
BE(sat)1
—
—
–2.0
—
—
–2.0
V
I
= –4 A, I
B
= –8
mA*
1
V
BE(sat)2
—
—
–3.5
—
—
–3.5
I
= –8 A, I
B
= –80
mA*
1
C to E diode forward
voltage
V
D
—
—
3.0
—
—
3.0
V
I
D
= 8 A*
1
Turn on time
t
on
t
stg
t
f
—
0.5
—
—
0.5
—
P
s
I
C
= –4 A,
I
B1
= –I
B2
= –8 mA
Storage time
—
3.0
—
—
3.0
—
Fall time
Note:
—
1.0
—
—
1.0
—
1. Pulse Test.
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature T
C
(
°
C)
C
C
Area of Safe Operation
–10
–3
–1.0
–0.3
C
C
–0.1
–0.03
–3
–10
–100
–30
–300
Collector to emitter voltage V
CE
(V)
Ta = 25
°
C
1 Shot Pulse
i
C(peak)
I
C(max)
1
μ
s
100
μ
s
DCOeao(
C
5
°
C
1m
2
2
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