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參數(shù)資料
| 型號： | 2SB1078K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(外延PNP晶體管) |
| 中文描述： | 硅外延進步黨（外延進步黨晶體管） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SB1078K |
2SB1078(K)
3
Collector to emitter Voltage V
CE
(V)
C
C
0
–1
–2
–3
–4
–5
Typical Output Characteristics
–2
–4
–6
–8
–10
T
C
= 25
°
C
I
B
= –0.5 mA
–1 mA
–1.5 mA
–2 mA
–2.5 mA
–3 mA
30
100
300
3,000
10,000
30,000
1,000
Collector current I
C
(A)
D
F
–0.1
–0.2
–0.5 –1.0
–2
–5
–10
DC Current Transfer Ratio vs.
Collector Current
V
= –3 V
Pulse
T
a
= 75
°
C
25
°
C
–25
°
C
–0.1
–0.2
Collector current I
C
(A)
–0.1 –0.2
–0.5 –1.0
–2
–5
–10
C
V
C
B
V
B
Saturation Voltage vs. Collector Current
–0.5
–1.0
–2
–5
–10
V
BE (sat)
V
CE (sat)
Ta = 25
°
C
Pulse
l
C
/l
B
= 200
500
200
500
0.1
0.2
0.5
1.0
2
5
10
Collector current I
C
(A)
S
μ
s
–0.1 –0.2
–0.5 –1.0
–2
–5
–10
Switching Time vs. Collector Current
Ta = 25
°
C
V
CC
= –30 V
I
C
= 500 I
B1
= –500 I
B2
t
f
t
on
t
stg
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