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參數(shù)資料
| 型號： | 2SB1078K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial(外延PNP晶體管) |
| 中文描述： | 硅外延進步黨（外延進步黨晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SB1078K |
2SB1078(K)
2
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
I
C
= –25 mA, R
BE
=
∞
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
—
V
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
—
V
I
E
= –50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
—
—
–100
μ
A
μ
A
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –4 A*
I
C
= –4 A, I
B
= –8 mA*
—
—
–10
DC current transfer ratio
1000
—
20000
1
Collector to emitter saturation
voltage
—
—
–1.5
V
1
V
CE(sat)2
V
BE(sat)1
—
—
–3.0
V
I
C
= –8 A, I
B
= –80 mA*
I
C
= –4 A, I
B
= –8 mA*
1
Base to emitter saturation
voltage
—
—
–2.0
V
1
V
BE(sat)2
t
on
t
stg
t
f
—
—
–3.5
V
I
C
= –8 A, I
B
= –80 mA*
I
C
= –4 A, I
B1
= –I
B2
= –8 mA
1
Turn on time
—
1.5
—
μ
s
μ
s
μ
s
Storage time
—
2.0
—
Fall time
Note:
—
0.5
—
1. Pulse test
0
50
100
150
Case Temperature T
C
(
°
C)
C
20
60
40
Maximum Collector Dissipation Curve
–0.03
–0.1
–0.3
–1.0
–3
–10
–30
Collector to emitter Voltage V
CE
(V)
C
C
–1.0
–3
–10
–30
–100 –300 –1,000
Area of Safe Operation
1
μ
s
i
C
(peak)
I
C
(max)
Ta = 25
°
C
1 Shot pulse
P
D T
C
=5
°
C
1m
1m
1
μ
s
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