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參數(shù)資料
| 型號： | 2SA2179 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications |
| 中文描述： | 進步黨硅外延平面晶體管50V / 13A條高速開關應用 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SA2179 |
2SA2179
No. A0199-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2005. Specifications and information herein are subject
to change without notice.
PS
IT10091
IT10090
IT10092
2.5
0.5
0
20
0
1.0
1.5
2.0
40
Ambient Temperature, Ta --
°
C
60
80
100
120
140
160
30
5
0
160
20
0
40
60
80
10
15
20
25
100
120
140
--0.01
2
3
5
7
2
3
5
7
2
3
2
3
5
7
--0.1
--1.0
--10
--1.0
2
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
3
5
7
--10
2
3
5
7
--100
ICP= --15A
DCopeaion
1m
10m
P=500
μ
s
IC= --13A
100ms
PC -- Ta
C
C
C
Case Temperature, Tc --
°
C
Tc=25
°
C
Single pulse
Nohea ink
Forward Bias A S O
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| 2SA2180 | 功能描述:TRANS PNP 50V 5A TO-220ML RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA2181 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching |
| 2SA2182(Q) | 功能描述:兩極晶體管 - BJT PNP 230V 1A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2182(STA4,Q) | 功能描述:兩極晶體管 - BJT PNP 230V 1A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2183(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 50V 2A 3-Pin TSM |
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