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參數(shù)資料
| 型號： | 2SA2016L-AB3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 7 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 2SA2016L-AB3-R |
2SA2016
PNP PLANAR TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R208-018.B
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2016-TD-E | 功能描述:兩極晶體管 - BJT BIP PNP 7A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2017 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SA2018 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Low Frequency Transistor |
| 2SA2018_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low frequency transistor |
| 2SA2018F | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Silicon General Purpose Transistor |
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