參數(shù)資料
型號(hào)： 2N6661.MOD
廠商： SEMELAB LTD
元件分類： 小信號(hào)晶體管
英文描述： 900 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
封裝： HERMETIC SEALED, METAL, TO-39, 3 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 76K
代理商： 2N6661.MOD
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 3092
Issue 5
Page 1 of 3
2N6661
VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0
Fast Switching
Low Threshold Voltage (Logic Level)
Low CISS
Integral Source-Drain Body Diode
Hermetic Metal TO39 Package
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
90V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
0.9A
IDM
Pulsed Drain Current
(1)
3.0A
PD
Total Power Dissipation at
TC ≤ 25°C
5W
De-rate TC > 25°C
40mW/°C
PD
Total Power Dissipation at
TA ≤ 25°C
725mW
De-rate TA > 25°C
5.8mW/°C
TJ
Operating Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction To Case
25
°C/W
RθJA
Thermal Resistance, Junction To Ambient
172
°C/W
Notes
(1)
Repetitive Rating: Pulse width limited by maximum junction temperature
(2)
Pulse Width ≤ 300us, δ ≤ 2%
相關(guān)PDF資料
PDF描述
2N6661B-1 4 ohm, Si, POWER, FET, TO-205AD
2N6661B Si, POWER, FET, TO-205AD
2N6661CSM4-JQR-BG4 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA
2N6661CSM4-JQR-AG4 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA
2N6661CSM4-QR-B 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA
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