- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33290 > 2N6661CSM4-JQR-BG4 (SEMELAB LTD) 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N6661CSM4-JQR-BG4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA |
| 封裝： | LCC3-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 86K |
| 代理商： | 2N6661CSM4-JQR-BG4 |
2N6661CSM4
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 3779, ISSUE 3
FEATURES
Faster switching
Low Ciss
Integral Source-Drain Diode
High Input Impedance and High Gain
DESCRIPTION
This enhancement-mode (normally-off) vertical DMOS FET is
ideally suited to a wide range of switching and amplifying
applications where high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
High Reliability Screening options are available.
N–CHANNEL
ENHANCEMENT MODE
MOSFET
V
DSS
90V
I
D
0.9A
R
DS(on)
4.0
CERAMIC LCC3 PACKAGE (MO-041BA)
(Underside View)
PAD 1 – DRAIN
PAD 3 – SOURCE
PAD 2 – N/C
PAD 4 – GATE
1
2
3
4
5.59 ± 0.13
(0.22 ± 0.005)
0.23
(0.009)
rad.
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
1.40 ± 0.15
(0.055 ± 0.006)
0.25 ± 0.03
(0.01 ± 0.001)
0.23
(0.009)
min.
1.
27
±
0.
05
(0
.05
±
0.
002
)
3.
81
±
0.
13
(0
.15
±
0.
00
5)
0.
64
±
0.
08
(0
.025
±
0.
003)
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS T
CASE = 25°C unless otherwise stated
V
DS
Drain - Source Voltage
90V
I
D
Drain Current
- Continuous (T
C = 25°C)
0.9A
- Continuous (T
C = 100°C)
0.7A
I
DM
Drain Current
- Pulsed (Note 1)
3A
V
GS
Gate - Source Voltage
±20V
P
tot(1)
Total Power Dissipation at T
mb ≤ 25°C
6.25W
De-rate Linearly above 25°C
0.050W/°C
P
tot(2)
Total Power Dissipation at T
amb ≤ 25°C
0.5W
T
j,Tstg
Operating and Storage Junction Temperature Range
-55 to +150°C
THERMAL DATA
R
thj-mb
Thermal Resistance Junction – Mounting base
Max
20
°C/W
R
thj-amb
Thermal Resistance Junction - Ambient
Max
250
°C/W
NOTES:
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width
≤ 380S, Duty Cycle , δ 2%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6661CSM4-JQR-AG4 | 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA |
| 2N6661CSM4-QR-B | 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA |
| 2N6661 | Si, SMALL SIGNAL, FET |
| 2N7002L | 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2N6661 | 2 A, 90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6661DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL N–CHANNEL ENHANCEMENT MODE |
| 2N6661-E3 | 功能描述:MOSFET 90V 0.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6661-E3/ | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N6661JAN02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:N-CH MOSFET TO-39 90V 4 OHM (MOTS) - Bulk |
| 2N6661JANTX | 制造商:Vishay Semiconductors 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。