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參數(shù)資料
| 型號(hào)： | 2N6052 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 190K |
| 代理商： | 2N6052 |
2N6052
4
Motorola Bipolar Power Transistor Device Data
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
20,000
0.2
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
200
0.3
0.5
1.0
2.0
20
h
FE
,DC
CURRENT
GAIN
10
PNP
2N6052
NPN
2N6058, 2N6059
Figure 10. Collector Saturation Region
3.0
0.5
IB, BASE CURRENT (mA)
1.0
2.0
10
50
1.8
IC = 3.0 A
TJ = 25°C
6.0 A
2.2
2.6
5.0
3.0
0.2
IC, COLLECTOR CURRENT (AMP)
0.3
0.5
1.0
3.0
20
2.5
2.0
1.5
1.0
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V
,VOL
TAGE
(VOL
TS)
Figure 11. “On” Voltages
VBE @ VCE = 3.0 V
2.0
10,000
TJ = 150°C
25
°C
–55
°C
20
IC, COLLECTOR CURRENT (AMP)
h
FE
,DC
CURRENT
GAIN
VCE = 3.0 V
TJ = 150°C
25
°C
–55
°C
1.4
9.0 A
IB, BASE CURRENT (mA)
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
TJ = 25°C
V
,VOL
TAGE
(VOL
TS)
VBE @ VCE = 3.0 V
5000
3000
2000
1000
500
300
3.0
5.0
VCE = 3.0 V
40,000
0.2
400
0.3
0.5
1.0
2.0
20
10
20,000
10,000
6,000
4,000
2,000
1,000
600
3.0
5.0
3.0
1.0
1.8
2.2
2.6
1.4
10
5.0
3.0
0.2 0.3
0.5
1.0
3.0
20
2.5
2.0
1.5
1.0
0.5
2.0
10
5.0
30
12 A
IC = 3.0 A
6.0 A
9.0 A
12 A
0.5
1.0
2.0
10
50
5.0
20
3.0
30
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6058 | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6053-JQR-BR1 | 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6052 (JANTX SCREENED) | 制造商:NJS 功能描述: |
| 2N6052 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| 2N6052/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6052_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6052G | 功能描述:達(dá)林頓晶體管 12A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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