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參數(shù)資料
| 型號： | 2N6052 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 190K |
| 代理商： | 2N6052 |
2N6052
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
2N6058
2N6052, 2N6059
VCEO(sus)
80
100
—
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N6058
(VCE = 50 Vdc, IB = 0)
2N6052, 2N6059
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
0.5
5.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 6.0 Adc, VCE = 3.0 Vdc)
(IC = 12 Adc, VCE = 3.0 Vdc)
hFE
750
100
18,000
—
—
Collector–Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 24 mAdc)
(IC = 12 Adc, IB = 120 mAdc)
VCE(sat)
—
2.0
3.0
Vdc
Base–Emitter Saturation Voltage
(IC = 12 Adc, IB = 120 mAdc)
VBE(sat)
—
4.0
Vdc
Base–Emitter On Voltage
(IC = 6.0 Adc, VCE = 3.0 Vdc)
VBE(on)
—
2.8
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small–Signal Short Circuit Forward
Current Transfer Ratio
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
|hfe|
4.0
—
MHz
Output Capacitance
2N6052
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6058/2N6059
Cob
—
500
300
pF
Small–Signal Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
300
—
—
* Indicates JEDEC Registered Data.
(1) Pulse test: Pulse Width = 300
s, Duty Cycle = 2.0%.
Figure 2. Switching Times Test Circuit
10
0.2
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t,TIME
(
s)
5.0
0.1
0.5
1.0
3.0
20
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
1.0
2.0
2N6052
2N6059
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+ 8.0 V
V1
approx
– 8.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25
s
0
RB
51
D1
+ 4.0 V
VCC
– 30 V
RC
TUT
≈ 5.0 k
≈ 50
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
0.5
0.2
5.0
10
For NPN test circuit reverse diode and voltage polarities.
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PDF描述 |
|---|---|
| 2N6058 | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6053-JQR-BR1 | 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6052 (JANTX SCREENED) | 制造商:NJS 功能描述: |
| 2N6052 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| 2N6052/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6052_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6052G | 功能描述:達林頓晶體管 12A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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