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參數(shù)資料
| 型號(hào)： | 2N6052 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 190K |
| 代理商： | 2N6052 |
1
Motorola Bipolar Power Transistor Device Data
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low frequency switching applications.
High DC Current Gain —
hFE = 3500 (Typ) @ IC = 5.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
VCEO(sus) = 100 Vdc (Min) — 2N6052, 2N6059
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
MAXIMUM RATINGS (1)
Rating
Symbol
2N6058
2N6052
2N6059
Unit
Collector–Emitter Voltage
VCEO
80
100
Vdc
Collector–Base Voltage
VCB
80
100
Vdc
Emitter–Base voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
12
20
Adc
Base Current
IB
0.2
Adc
Total Device Dissipation
@TC = 25_C
Derate above 25
_C
PD
150
0.857
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Rating
Unit
Thermal Resistance, Junction to Case
R
θJC
1.17
_C/W
(1) Indicates JEDEC Registered Data.
160
0
25
50
75
100
125
150
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
120
100
140
175
80
40
20
60
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6052/D
Motorola, Inc. 1998
2N6052
2N6058
2N6059
*Motorola Preferred Device
DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
150 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
PNP
NPN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6058 | 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N6053-JQR-BR1 | 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6052 (JANTX SCREENED) | 制造商:NJS 功能描述: |
| 2N6052 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| 2N6052/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6052_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6052G | 功能描述:達(dá)林頓晶體管 12A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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