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參數(shù)資料
| 型號(hào)： | 2N4416A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-35V，最小飽和漏極電流5mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 35V之間，最小飽和漏極電流5mA的的N溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | 2N4416A |
2N4416/2N4416A/SST4416
6
Siliconix
S-52424—Rev. E, 14-Apr-97
Typical Characteristics (Cont’d)
Reverse Admittance
Output Admittance
10
1
0.1
0.01
100
1000
(
T
A
= 25 C
V
DS
= 15 V
V
GS
= 0 V
Common Source
–b
rs
–g
rs
10
1
0.1
0.01
100
1000
T
A
= 25 C
V
DS
= 15 V
V
GS
= 0 V
Common Source
b
os
g
os
(
f – Frequency (MHz)
f – Frequency (MHz)
200
500
200
500
10
100
1 k
100 k
10 k
20
0
16
12
8
4
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
V
DS
= 10 V
I
D
= 5 mA
V
GS
= 0 V
0.1
1
10
T
A
= –55 C
125 C
V
GS(off)
= –3 V
I
D
– Drain Current (mA)
f – Frequency (Hz)
20
0
16
12
8
4
V
DS
= 10 V
f = 1 kHz
V
DG
– Drain-Gate Voltage (V)
I
D
– Drain Current (mA)
Gate Leakage Current
–
I
G
0.1 mA
I
GSS
@ 25 C
I
GSS
@
125 C
Common-Source Forward
Transconductance vs. Drain Current
0.1
1
10
10
8
0
g
f
V
GS(off)
= –3 V
T
A
= –55 C
125 C
0
12
8
4
16
20
6
4
2
V
DS
= 10 V
f = 1 kHz
5 mA
1 mA
0.1 mA
T
A
= 25 C
T
A
= 125 C
I
G
@ I
D
= 5 mA
1 mA
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
100 nA
25 C
25 C
(
e
n
/
√
)
–
S
g
f
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4416A_08 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL J-FET |
| 2N4416A_TO-18 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a N-Channel high frequency JFET amplifier |
| 2N4416A_TO-72 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a N-Channel high frequency JFET amplifier |
| 2N4416A_TO-92 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a N-Channel high frequency JFET amplifier |
| 2N4416A-2 | 制造商:Vishay Siliconix 功能描述:FIELD EFFECT TRANSISTOR |
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