參數(shù)資料
型號(hào): 2N4416A
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel JFET(最小柵源擊穿電壓-35V,最小飽和漏極電流5mA的N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述: N溝道場(chǎng)效應(yīng)(最小柵源擊穿電壓- 35V之間,最小飽和漏極電流5mA的的N溝道結(jié)型場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 76K
代理商: 2N4416A
2N4416/2N4416A/SST4416
Siliconix
S-52424—Rev. E, 14-Apr-97
3
High-Frequency Specifications
a, b
for 2N4416 and 2N4416A
Limits
100 MHz
400 MHz
Parameter
Symbol
Test Conditions
Min
Max
Min
Max
Unit
Common Source Input Conductance
Common Source Input Susceptance
Common Source Output Conductance
Common Source Output Susceptance
Common Source Forward Transconductance
Common-Source Power Gain
Noise Figure
g
iss
b
iss
g
oss
b
oss
g
fs
G
ps
NF
100
2,500
75
1,000
1,000
10,000
100
4,000
V
DS
= 15 V, V
GS
= 0 V
S
4,000
10
V
DS
= 15 V, I
D
= 5 mA
18
dB
R
G
= 1 k
2
4
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
NH
Typical Characteristics
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
r
DS
g
os
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
I
D
g
f
I
DSS
g
fs
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
V
GS(off)
– Gate-Source Cutoff Voltage (V)
Output Characteristics
10
8
0
6
4
2
0
16
12
8
4
0
–10
–2
–4
–6
–8
100
80
0
60
40
20
500
0
400
300
200
100
0
–10
–2
–4
–6
–8
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Output Characteristics
I
D
I
D
10
0
8
6
4
2
0
10
2
4
6
8
15
0
12
9
6
3
0
10
2
4
6
8
V
GS(off)
= –2 V
V
GS(off)
= –3 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
V
GS
= 0 V
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
V
GS
= 0 V
–0.3 V
V
GS(off)
– Gate-Source Cutoff Voltage (V)
r
D
)
S
g
f
–1.4 V
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