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參數(shù)資料
| 型號(hào)： | 2N4416A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-35V，最小飽和漏極電流5mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 35V之間，最小飽和漏極電流5mA的的N溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 2N4416A |
2N4416/2N4416A/SST4416
Siliconix
S-52424—Rev. E, 14-Apr-97
5
Typical Characteristics (Cont’d)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
0.1
1
10
T
A
= 25 C
–3 V
V
GS(off)
= –2 V
10
0.1
A
V
g
fs
R
L
R
L
g
os
1
Assume V
DD
= 15 V, V
DS
= 5 V
10 V
I
D
R
L
V
GS(off)
= –2 V
–3 V
A
V
–
300
0
240
180
120
60
100
0
80
60
40
20
1
r
D
–
)
–
C
i
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
f = 1 MHz
V
DS
= 0 V
10 V
–
C
r
V
DS
= 0 V
10 V
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
f = 1 MHz
Input Admittance
Forward Admittance
100
10
1
0.1
100
1000
T
A
= 25 C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(
100
10
1
0.1
100
1000
T
A
= 25 C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(
f – Frequency (MHz)
f – Frequency (MHz)
5
0
4
3
2
1
0
–20
–4
–8
–12
–16
3
0
2.4
1.8
1.2
0.6
0
–20
–4
–8
–12
–16
200
500
200
500
b
is
g
is
–b
fs
g
fs
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|---|---|
| 2N4416A_08 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL J-FET |
| 2N4416A_TO-18 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a N-Channel high frequency JFET amplifier |
| 2N4416A_TO-72 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a N-Channel high frequency JFET amplifier |
| 2N4416A_TO-92 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a N-Channel high frequency JFET amplifier |
| 2N4416A-2 | 制造商:Vishay Siliconix 功能描述:FIELD EFFECT TRANSISTOR |
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