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參數(shù)資料
| 型號： | 2N3866UB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon NPN Transistor |
| 中文描述： | 硅NPN晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 240K |
| 代理商： | 2N3866UB |
Copyright
2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 2 of 2
2N3866UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
°
C
Off Characteristics
Parameter
Symbol
Test Conditions
I
C
= 100
μ
A
Min
Typ
Max
Units
Volts
Collector-Base Breakdown Voltage
V
(BR)CBO
60
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 5 mA
30
Volts
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
CEO
I
CES1
I
CES2
I
E
= 100
μ
A
V
CE
= 28 Volts
V
CE
= 55 Volts
V
CE
= 55 Volts, T
A
= 150
°
C
3.5
Volts
Collector-Emitter Cutoff Current
20
100
2
μ
A
μ
A
mA
Collector-Emitter Cutoff Current
On Characteristics
Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%
Parameter
Symbol
h
FE1
h
FE2
h
FE3
Test Conditions
I
C
= 50 mA, V
CE
= 5 Volts
I
C
= 360 mA, V
CE
= 5 Volts
I
C
= 50 mA, V
CE
= 5 Volts
T
A
= -55
°
C
I
C
= 100 mA, I
B
= 10 mA
Min
15
5
7
Typ
Max
200
1
Units
DC Current Gain
Collector-Emitter Saturation Voltage
V
CEsat1
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
V
CE
= 15 Volts, I
C
= 50 mA,
f = 200 MHz
V
CB
= 28 Volts, I
E
= 0 mA,
V
CC
= 28 Volts, f = 400 MHz
P
in
= 0.15 W
P
in
= 0.075 W
V
CC
= 28 Volts, f = 400 MHz
P
in
= 0.15 W
P
in
= 0.075 W
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
|h
FE
|
2.5
8
C
OBO
η
1
η
2
P
1out
P
1out
3.5
pF
Collector Efficiency
45
40
1.0
0.5
%
Power Output
2
Watts
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3867 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 3A 3PIN TO-5 - Bulk 制造商:undefined 功能描述: |
| 2N3867_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SILICON LOW POWER TRANSISTOR |
| 2N3867S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 3A 3PIN TO-39 - Bulk 制造商: 功能描述: 制造商:undefined 功能描述: |
| 2N3867SMD05 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed |
| 2N3868 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 3A 3PIN TO-5 - Bulk 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR, PNP, 80V, 1A, TO-205AD-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:7W; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3 |
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