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參數(shù)資料
| 型號(hào)： | 2N3866AUB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Chip Type 2C3866A Geometry 1007 Polarity NPN |
| 中文描述： | 片式2C3866A幾何1007極性npn型 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | 2N3866AUB |
Chip Type 2C3866A
Geometry 1007
Polarity NPN
Data S heet No. 2C3866A
Generic Packaged Parts:
2N3866, 2N3866A
Chip type
2C3866A
by Semicoa
Semiconductors provides perfor-
mance similar to these devices.
Product Summary:
APPLICATIONS:
Designed for amplifier,
frequency multiplier and oscillator applica-
tions. Suitable for output, driver and predriver
stages in VHF and UHF equipment.
Part Numbers:
2N3866A
, 2N3866, 2N3866AUB, SD3866A,
SD3866AF, SQ3866A, SQ3866AF
Features:
Special Characteristics:
ft = 950 MHz (type) at 50 mA/15V
Top
Al - 15 k min.
Au - 6.5 k nom.
3.4 mils x 3.0 mils
3.4 mils x 3.0 mils
8 mils nominal
Backside
Emitter
Base
Die Thickness
Chip Area
Top Surface
15 mils x 20 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
Parameter
BV
CEO
BV
CBO
BV
CER
BV
EBO
I
CEO
h
FE1
h
FE2
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 μs, duty cycle less than 2%.
Test conditions
I
C
= 5.0 mA
I
C
= 100 μA
I
C
= 5.0 mA, R
BE
= 10 Ohms
I
E
= 100 μA
V
CE
= 28 V, V
EB
= 2.0 V
I
C
= 360 mA dc, V
CE
= 5.0 V
I
C
= 50 mA dc, V
CE
= 5.0 V
Min
30
55
55
3.5
---
5.0
10
Max
---
---
---
---
20
---
200
Unit
V dc
V dc
V dc
V dc
μA
---
---
Electrical Characteristics
T
A
= 25
o
C
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