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參數(shù)資料
| 型號： | 2N2221AUB |
| 廠商： | MICROSEMI CORP-IRELAND |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON SWITCHING TRANSISTOR |
| 中文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 2N2221AUB |
ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°
C unless otherwise specified)
Symbol
I
CBO
Parameter
Test Conditions
V
CB
= 50 V
V
CB
= 50 V
Min.
Typ.
Max.
10
10
Unit
nA
μ
A
Collector Cutoff Current
(I
E
= 0)
Emitter Cutoff Current
(I
C
= 0)
Colllector-base Breakdown
Voltage (I
E
= 0)
Collector-emitter Breakdown
Voltage (I
B
= 0)
Emittter-base Breakdown
Voltage (I
C
= 0)
Collector-emitter Saturation
Voltage
Base-emitter Saturation
Voltage
DC Current Gain
T
amb
= 150
°
C
I
EBO
V
EB
= 3 V
10
nA
V
(BR) CBO
I
C
= 10
μ
A
60
V
V
(BR)CEO
*
I
C
= 10 mA
30
V
V
(BR) EBO
I
E
= 10
μ
A
5
V
V
CE (sat )
*
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
I
C
= 500 mA
for
2N2218
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
for
2N2219
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
I
C
= 20 mA
f = 100 MHz
I
E
= 0
f = 100 kHz
I
C
= 20 mA
f = 300 MHz
I
B
= 15 mA
I
B
= 50 mA
I
B
= 15 mA
I
B
= 50 mA
and
2N2221
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 1 V
and
2N2222
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 1 V
0.4
1.6
1.3
2.6
V
V
V
V
V
BE (sat )
*
h
FE
*
20
25
35
40
20
20
35
50
75
100
30
50
120
300
f
T
Transition Frequency
V
CE
= 20 V
250
MHz
C
CBO
Collector-base Capacitance
V
CB
= 10 V
8
pF
R
e(hie)
Real Part of Input
Impedance
V
CE
= 20 V
60
* Pulsed : pulse duration = 300
μ
s, duty cycle = 1 %.
THERMAL DATA
2N2218
2N2219
50
°
C/W
187.5
°
C/W
2N2221
2N2222
83.3
°
C/W
300
°
C/W
R
th j-case
R
th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
2N2218-2N2219-2N2221-2N2222
2/5
相關PDF資料 |
PDF描述 |
|---|---|
| 2N2221A | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| 2N2221A | Small Signal Transistors |
| 2N2221A | NPN SILICON PLANAR TRANSISTORS |
| 2N2221A | SMALL SIGNAL BIPOLAR NPN SILICON |
| 2N2221AL | NPN SILICON SWITCHING TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2221AUBC | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN SILICON SWITCHING TRANSISTOR |
| 2N2221AX | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH SPEED SWITCHING BIPOLAR NPN |
| 2N2221CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed LCC1 |
| 2N2221DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar NPN Devices in a hermetically sealed |
| 2N2222 | 功能描述:兩極晶體管 - BJT NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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