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參數(shù)資料
| 型號： | 2N2221AUB |
| 廠商： | MICROSEMI CORP-IRELAND |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON SWITCHING TRANSISTOR |
| 中文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 2N2221AUB |
2N2218-2N2219
2N2221-2N2222
January 1989
HIGH-SPEED SWITCHES
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Parameter
Value
60
30
5
0.8
Unit
V
V
V
A
Collector-base Voltage (I
E
= 0)
Collector-emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Total Power Dissipation at T
amb
≤
25
°
C
for
2N2218
and
2N2219
for
2N2221
and
2N2222
at T
case
≤
25
°
C
for
2N2218
and
2N2219
for
2N2221
and
2N2222
0.8
0.5
3
1.8
W
W
W
W
°
C
°
C
T
stg
T
j
Storage Temperature
Junction Temperature
– 65 to 200
175
DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar
epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18(for 2N2221 and 2N2222) metalcases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and featureuse-
ful current gain over a wide range of collector cur-
rent, low leakage currents and low saturation volt-
ages.
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
2N2218/2N2219 approved to CECC 50002-
100, 2N2221/2N2222 approved to CECC
50002-101 available on request.
1/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2221A | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| 2N2221A | Small Signal Transistors |
| 2N2221A | NPN SILICON PLANAR TRANSISTORS |
| 2N2221A | SMALL SIGNAL BIPOLAR NPN SILICON |
| 2N2221AL | NPN SILICON SWITCHING TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2221AUBC | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN SILICON SWITCHING TRANSISTOR |
| 2N2221AX | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH SPEED SWITCHING BIPOLAR NPN |
| 2N2221CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed LCC1 |
| 2N2221DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar NPN Devices in a hermetically sealed |
| 2N2222 | 功能描述:兩極晶體管 - BJT NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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