參數(shù)資料
型號(hào)： 2N2221AL
廠商： MICROSEMI CORP-LAWRENCE
元件分類(lèi)： 小信號(hào)晶體管
英文描述： NPN SILICON SWITCHING TRANSISTOR
中文描述： 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
封裝： SIMILAR TO TO-18, 3 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 53K
代理商： 2N2221AL
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221A
2N2222A
TO-18
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2221A,22A
UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25deg C
@ Tc=25 degC
Derate Above 25deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
VCEO
VCBO
VEBO
IC
PD
40
75
6.0
800
500
2.28
1.2
6.85
V
V
V
mA
mW
mW/deg C
PD
W
mW/deg C
deg C
Tj, Tstg
-65 to +200
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
MIN
40
75
6.0
-
MAX
-
-
-
10
UNIT
V
V
V
nA
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=60V, IE=0
Ta=150 deg C
VCB=60V, IE=0
VCE=60V, VEB=3V
VEB=3V, IC=0
VCE=60V, VEB=3V
-
-
-
-
-
10
10
10
20
0.3
1.0
uA
nA
nA
nA
V
V
V
V
ICEX
IEBO
IBL
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
-
-
0.6-1.2
2.0
Continental Device India Limited
Page 1 of 3
http://www.bocasemi.com page : 1
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
相關(guān)PDF資料
PDF描述
2N2222ACSM4 High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開(kāi)關(guān)型NPN晶體管（高可靠性、陶瓷表貼封裝）)
2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
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