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參數(shù)資料
| 型號： | 2N2150 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-111 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2N2150 |
2N2150, 2N2151 JANTX SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 5.0 Vdc
I
C
= 0.5 Adc, V
CE
= 5.0 Vdc
I
C
= 0.1 Adc, V
CE
= 5.0 Vdc
I
C
= 1.0 Adc, V
CE
= 5.0 Vdc
I
C
= 0.5 Adc, V
CE
= 5.0 Vdc
I
C
= 0.1 Adc, V
CE
= 5.0 Vdc
Base-Emitter Voltage Non -Saturated
V
CE
= 5.0 Vdc, I
C
=1.0 Adc
Collector-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
Base-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 30 Vdc, f = 10 MHz
Output Capacitance
V
CB
= 20 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
SAFE OPERATING AREA
Test 1
V
CE
= 15 Vdc, I
C
= 2.0 Adc
Test 2
V
CE
= 57 Vdc, I
C
= 200 mAdc
Test 3
V
CE
= 100 Vdc, I
C
= 25 mAdc
2N2150
2N2151
h
FE
20
20
20
40
40
40
60
60
120
120
V
BE
1.2
Vdc
V
CE(sat)
1.0
Vdc
Vdc
V
BE(sat)
1.2
h
fe
1.0
7.0
C
obo
160
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2151 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 2A 4PIN TO-111 - Bulk |
| 2N2152 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30A I(C) | TO-36 |
| 2N2152A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30A I(C) | TO-67 |
| 2N2153 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 30A I(C) | TO-36 |
| 2N2154 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 30A I(C) | TO-36 |
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