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參數(shù)資料
| 型號： | 2N2151 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-111 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 69K |
| 代理商： | 2N2151 |
MSC0942A.DOC 11-03-98
2N2151
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CBO
*
Collector-Base Voltage
V
CEO
*
Collector-Emitter Voltage
V
EBO
*
Emitter-Base Voltage
I
C
*
Peak Collector Current
I
C
*
Continuous Collector Current
I
B
*
Continuous Base Current
T
STG
*
Storage Temperature
T
J
*
Operating Junction Temperature
Lead Temperature 1/16"
From Case for 10 Sec.
Power Dissipation
T
A
= 25
°
C
T
C
= 100
°
C
Thermal Resistance
Junction to Case
CHARACTERISTIC
VALUE
150
100
8
10
5
2
-65 to 200
-65 to 200
230
UNITS
V
V
V
A
A
A
°
C
°
C
°
C
*
P
T
*
2
30
W
W
θ
JC
3.33
°
C/W
5 Amp, 100V,
Planar, NPN
Power Transistors
JAN, JANTX
FEATURES:
High Reliability
Greater Gain Stability
TO-59
APPLICATIONS:
Fast Switching
High Frequency Switching and Amplifying
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200
°
C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
* Indicates JEDEC registered data.
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