
TECHNICAL DATA 
SILICON CONTROLLED RECTIFIER  
Qualified per MIL-PRF-19500/ 276 
Devices 
Qualified 
Level 
2N2323 
2N2323S 
2N2323A 
2N2323AS 
MAXIMUM RATINGS 
2N2324 
2N2324S 
2N2324A 
2N2324AS 
2N2326 
2N2326S 
2N2326A 
2N2326AS 
2N2328 
2N2328S 
2N2328A 
2N2328AS 
2N2329 
2N2329S 
JAN 
JANTX 
JANTXV 
Ratings 
Sym 2N2323,S/ 
2N2323A,S 
V
RM
2N2324,S/ 
2N2324A,S 
100 
150 
100
(3/4) 
2N2326,S/ 
2N2326A,S 
200 
300 
200
(3/4) 
0.22 
15 
6 
 -65 to +125
-65 to +150
2N2328,S/ 
2N2328A,S 2N2329,S Unit 
300 
400 
300
(3/4) 
Reverse Voltage 
Working Peak Reverse Voltage V
RM
Forward Blocking Voltage 
Average Forward Current 
(1)
 Forward Current Surge Peak
(2)
Cathode-Gate Current 
Operating Temperature  
Storage Junction Temp 
1) This average forward current is for an ambient temperature of 80
0
C and 180 electrical degrees of 
conduction.  
2) Surge current is non-recurrent.  The rate of rise of peak surge current shall not exceed 40 A during 
the first 5 
μ
s after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured 
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3) Gate connected to cathode through 1,000 ohm resistor.
4) Gate connected to cathode through 2,000 ohm resistor.
ELECTRICAL CHARACTERISTICS  
Characteristics 
SUBGROUP 2 TESTING 
Reverse Blocking Current 
   R
2
 = 1 k
μ
2N2323 thru 2N2329 
2N2323S thru 2N2329S 
   R
2
 = 2 k
μ
2N2323A thru 2N2328A 
2N2323AS thru 2N2328AS 
   V
R
 =  50 Vdc 
2N2323, S, A, AS 
   V
R
 = 100 Vdc 
2N2324, S, A, AS 
   V
R
 = 200 Vdc 
2N2326, S, A, AS 
   V
R
 = 300 Vdc 
2N2328, S, A, AS 
   V
R
 = 400 Vdc 
2N2329, S,  
6 Lake Street, Lawrence, MA  01841 
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
50 
75 
50
(3/4) 
400 
500 
400
(3) 
Vdc 
Vpk 
Vpk 
Adc 
Adc 
Vpk  
0
C
0
C
V
FBXM
I
O
I
FSM
V
KGM 
T
op
T
stg
TO-5 
*See appendix A
for package outline
Symbol 
Min. 
Max. 
Unit 
I
RBX1
10 
μ
Adc 
120101                               
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