28F400BL-T/B, 28F004BL-T/B
Intel’s 4-Mbit Low Power Flash Memory Family is an extension of the Boot Block Architecture which includes
block-selective erasure, automated write and erase operations and standard microprocessor interface. The
4-Mbit Low Power Flash Memory Family enhances the Boot Block Architecture by adding more density and
blocks, x8/x16 input/output control, very low power, very high speed, an industry standard ROM compatible
pinout and surface mount packaging. The 4-Mbit low power flash family opens a new capability for 3V battery-
operated portable systems and is an easy upgrade to Intel’s 2-Mbit Low Power Boot Block Flash Memory
Family.
The Intel 28F400BL-T/B are 16-bit wide low power flash memory offerings. These high density flash memories
provide user selectable bus operation for either 8-bit or 16-bit applications. The 28F400BL-T and 28F400BL-B
are 4,194,304-bit non-volatile memories organized as either 524,288 bytes or 262,144 words of information.
They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages. The x8/x16 pinout conforms to the
industry standard ROM/EPROM pinout. The Intel 28F004BL-T/B are 8-bit wide low power flash memories
with 4,194,304 bits organized as 524,288 bytes of information. They are offered in a 40-Lead TSOP package,
which is ideal for space-constrained portable systems.
These devices use an integrated Command User Interface (CUI) and Write State Machine (WSM) for simplified
word/byte write and block erasure. The 28F400BL-T/28F004BL-T provide block locations compatible with
Intel’s Low Voltage MCS-186 family, i386
TM
, i486
TM
microprocessors. The 28F400BL-B/28F004BL-B provide
compatibility with Intel’s 80960KX and 80960SX families as well as other low voltage embedded microproces-
sors.
The boot block includes a data protection feature to protect the boot code in critical applications. With a
maximum access time of 150 ns, these 4-Mbit low power flash devices are very high performance memories at
3.3V which interface to a wide range of low voltage microprocessors and microcontrollers. A deep power-
down mode lowers the total V
CC
power consumption to 0.66
m
W which is critical in handheld battery powered
systems such as Handy Cellular Phones. For very high speed applications using a 5V supply, refer to the Intel
28F400BX-T/B, 28F004BX-T/B 4-Mbit Boot Block Flash Memory family datasheet.
Manufactured on Intel’s 0.8 micron ETOX III process, the 4-Mbit flash memory family provides world class
quality, reliability and cost-effectiveness at the 4 Mbit density level.
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