參數(shù)資料
型號： 22C10
英文描述： 256-Bit Nonvolatile CMOS Static RAM
中文描述： 256位非易失性的CMOS靜態(tài)RAM
文件頁數(shù)： 7/10頁
文件大小： 70K
代理商： 22C10
CAT22C10
7
Doc. No. 25018-0A 2/98 N-1
Write
With the chip enabled and the nonvolatile functions
inhibited, the Write Enable (
WE
) pin will select the write
mode when driven to a low level. In this mode, the
address must be supplied for the byte being written.
After the set-up time (t
AS
), the input data must be
supplied to pins I/O
0
–I/O
3
. When these conditions, in-
Figure 2. Write Cycle Timing
5153 FHD F04
Figure 3. Early Write Cycle Timing
5153 FHD F05
cluding the write pulse width time (t
WP
) are met, the data
will be written to the specified location in the Static RAM.
A write function may also be initiated from the standby
mode by driving
WE
low, inhibiting the nonvolatile func-
tions, supplying valid addresses, and then taking
CS
low
and supplying input data.
tWC
tAS
tWR
DATA VALID
CS
DATA IN
ADDRESS
WE
tWP
tDW
tCW
tDH
DATA OUT
HIGH-Z
tWC
tAS
tWR
DATA VALID
CS
DATA IN
ADDRESS
WE
tWP
tDW
tCW
tDH
DATA OUT
tWZ
tOW
HIGH-Z
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