參數(shù)資料
型號： 22C10
英文描述： 256-Bit Nonvolatile CMOS Static RAM
中文描述： 256位非易失性的CMOS靜態(tài)RAM
文件頁數(shù)： 4/10頁
文件大小： 70K
代理商： 22C10
CAT22C10
4
Doc. No. 25018-0A 2/98 N-1
A.C. CHARACTERISTICS, Read Cycle
V
CC
= +5V
±
10%, unless otherwise specified.
22C10-20
Min.
22C10-30
Min.
Symbol
Parameter
Max.
Max.
Unit
Conditions
t
RC
Read Cycle Time
200
300
ns
C
L
= 100pF
t
AA
Address Access Time
200
300
ns
+1TTL gate
t
CO
CS Access Time
200
300
ns
V
OH
= 2.2V
t
OH
Output Data Hold Time
0
0
ns
V
OL
= 0.65V
t
LZ(1)
CS Enable Time
0
0
ns
V
IH
= 2.2V
t
HZ(1)
CS Disable Time
100
100
ns
V
IL
= 0.65V
A.C. CHARACTERISTICS, Write Cycle
V
CC
= +5V
±
10%, unless otherwise specified.
22C10-20
Min.
22C10-30
Min.
Symbol
Parameter
Max.
Max.
Unit
Conditions
t
WC
Write Cycle Time
200
300
ns
t
CW
CS Write Pulse Width
150
150
ns
t
AS
Address Setup Time
50
50
ns
C
L
= 100pF
t
WP
Write Pulse Width
150
150
ns
+1TTL gate
t
WR
Write Recovery Time
25
25
ns
V
OH
= 2.2V
t
DW
Data Valid Time
100
100
ns
V
OL
= 0.65V
t
DH
Data Hold Time
0
0
ns
V
IH
= 2.2V
t
WZ(1)
Output Disable Time
100
100
ns
V
IL
= 0.65V
t
OW
Output Enable Time
0
0
ns
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
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