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| 型號： | 21628 |
| 英文描述： | 1.8 Volt-only Flash Memory Technology |
| 中文描述： | 1.8伏只快閃記憶體技術(shù) |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 75K |
| 代理商： | 21628 |
1.8 Volt-only Flash Memory Technology Background
3
floating gate as a voltage source in series with the control gate. Charge is moved on and off
the floating gate by the program and erase operations respectively. If the voltage on the
control gate exceeds the resultant V
t
, the transistor begins to conduct, and a current (I
ds
)
proportional to this voltage begins to flow from the drain to the source. The proportionality
factor is the transconductance of the transistor (G
m
). The current I
ds
flows in the bit line
through an active load. It is the voltage developed across the load that is compared to a preset
reference (V
ref
) to determine the state of the cell (see Figure 2).
Figure 1. AMD Flash Memory Cell
Word Line
Floating Gate (Poly)
Source
n+
Drain
n+
P Substrate
Control Gate (Poly)
Tunnel Oxide
Inter-poly Dielectric
Bit Line
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