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| 型號： | 21628 |
| 英文描述： | 1.8 Volt-only Flash Memory Technology |
| 中文描述： | 1.8伏只快閃記憶體技術(shù) |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 75K |
| 代理商： | 21628 |
2
1.8 Volt-only Flash Memory Technology Background
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AMD’s flash technology leadership and innovation have produced a new generation of single-
power-supply flash memory devices. The
Am29SL800B
is the first of a new family of
S
uper
L
ow voltage flash memory devices from AMD. This device performs read, program, and
erase operations using only a single power supply down to
1.8 volts
,
while maintaining
performance comparable to 5.0 volt-only technology. The device offers all the features of
AMD’s industry-standard 2.7 volt-only Am29LV800B device at substantially reduced power
consumption, making it the ideal choice for low-power, battery-operated portable applications
such as cellular phones, PDAs, and pagers.
The following is an abbreviated list of the Am29SL800B distinctive characteristics:
J
1.8 V to 2.2 V device V
CC
operating range
J
1 mA typical active read current at 1 MHz (5 mA at 5 MHz)
J
10 mA typical active program/erase current
J
0.2
μ
A typical standby current
J
Automatic Sleep Mode (no turn-on penalty)
J
Minimum 1,000,000 program/erase cycle guarantee per sector
For a complete list of features, operational description and specifications see publication
number 21545 (the Am29SL800B data sheet). The remainder of this document will focus on
the fundamentals of flash technology at 1.8 volts.
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Flash memory technology is a very complex science, as exemplified by the small number of
volume manufacturers present today in the world. Performing this science from a single 1.8
volt source, while maintaining performance and reliability with minimal die size impact, was
a significant engineering achievement. The development of this product resulted in several
patents specific to low voltage operation.
There are three major operations that a flash memory device performs: program, erase and
read. The following is an examination of each of these processes.
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AMD’s flash memory cell is composed of a single stacked gate transistor. The gate structure
of this transistor consists of a polysilicon control gate located directly above a polysilicon
floating gate, separated by a dielectric (see Figure 1). The amount of charge present on the
floating gate affects the turn-on threshold (V
t
) of the transistor. Imagine the charge on the
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