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參數(shù)資料
| 型號： | 1SS374 |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236 |
| 封裝： | S-MINI, 1-3G1G, SC-59, TO-236MOD, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 205K |
| 代理商： | 1SS374 |
1SS374
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS374
High Speed Switching Application
Small package
Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55
125
°C
Operating temperature range
Topr
40
100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 1mA
―
0.18
―
VF (2)
―
IF = 5mA
―
0.23
0.30
Forward voltage
VF (3)
―
IF = 100mA
―
0.35
0.50
V
Reverse current
IR
―
VR = 10V
―
20
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
20
40
pF
Marking
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
1-3G1G
Weight: 0.012g (typ.)
Unit: mm
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