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參數資料
| 型號： | 1SS385 |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | SSM, 1-2S1B, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 120K |
| 代理商： | 1SS385 |
1SS385
2001-06-13
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385
High Speed Switching
l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
l Small package
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55
~125
°C
Operating temperature range
Topr
40
~100
°C
*:
Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 1mA
―
0.18
―
V
VF (2)
―
IF = 5mA
―
0.23
0.30
V
Forward voltage
VF (3)
―
IF = 100mA
―
0.35
0.50
V
Reverse current
IR
―
VR = 10V
―
20
A
Total capacitance
CT
―
VR = 0, f = 1MHz
―
20
40
pF
Equivalent Circuit (Top View)
Marking
JEDEC
―
EIAJ
―
TOSHIBA
1-2S1B
Weight: 2.4mg
Unit: mm
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 1SS385_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching |
| 1SS385F | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching |
| 1SS385F_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching |
| 1SS385FV | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications |
| 1SS385FV(TPL3,Z) | 制造商:Toshiba 功能描述:DIODE |
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