參數(shù)資料
型號: 1SS385
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: SSM, 1-2S1B, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 120K
代理商: 1SS385
1SS385
2001-06-13
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385
High Speed Switching
l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
l Small package
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55
~125
°C
Operating temperature range
Topr
40
~100
°C
*:
Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1mA
0.18
V
VF (2)
IF = 5mA
0.23
0.30
V
Forward voltage
VF (3)
IF = 100mA
0.35
0.50
V
Reverse current
IR
VR = 10V
20
A
Total capacitance
CT
VR = 0, f = 1MHz
20
40
pF
Equivalent Circuit (Top View)
Marking
JEDEC
EIAJ
TOSHIBA
1-2S1B
Weight: 2.4mg
Unit: mm
相關(guān)PDF資料
PDF描述
1SS390T/R7 35 V, SILICON, PIN DIODE
1SS390 35 V, SILICON, PIN DIODE
1SS391 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
1SS393 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
1SS393 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1SS385_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching
1SS385F 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching
1SS385F_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching
1SS385FV 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications
1SS385FV(TPL3,Z) 制造商:Toshiba 功能描述:DIODE