參數(shù)資料
型號(hào): 1SS378
元件分類: 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述: 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: USM, 1-2P1B, SC-70, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 210K
代理商: 1SS378
1SS378
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type
1SS378
High Speed Switching
Low forward voltage
: VF = 0.23V (typ.) @IF = 5mA
Small package
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55
125
°C
Operating temperature range
Topr
40
100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min.
Typ.
Max.
Unit
VF (1)
IF = 1mA
0.18
V
VF (2)
IF = 5mA
0.23
0.30
V
Forward voltage
VF (3)
IF = 100mA
0.35
0.50
V
Reverse current
IR
VR = 10V
20
μ
A
Total capacitance
CT
VR = 0, f = 1MHz
20
40
pF
Equivalent Circuit (Top View)
Marking
JEDEC
JEITA
SC-70
TOSHIBA
1-2P1B
Weight: 0.006g (typ.)
Unit: mm
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