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參數(shù)資料
| 型號： | 1N5818-13 |
| 廠商： | DIODES INC |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 57K |
| 代理商： | 1N5818-13 |
DS23001 Rev. 6 - 2
1 of 2
1N5817-1N5819
www.diodes.com
Diodes Incorporated
Features
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
A
B
C
D
DO-41 Plastic
Dim
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.3 grams (approx)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N5817
1N5818
1N5819
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
V
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified Output Current
(Note 1)
@ TL = 90
°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
25
A
Forward Voltage (Note 2)
@ IF = 1.0A
@ IF = 3.0A
VFM
0.450
0.750
0.550
0.875
0.60
0.90
V
Peak Reverse Leakage Current
@TA = 25
°C
at Rated DC Blocking Voltage (Note 2)
@ TA = 100
°C
IRM
1.0
10
mA
Typical Total Capacitance (Note 3)
CT
110
pF
Typical Thermal Resistance Junction to Lead (Note 4)
RqJL
15
°C/W
Typical Thermal Resistance Junction to Ambient
RqJA
50
Operating and Storage Temperature Range
Tj, TSTG
-65 to +125
°C
Notes:
1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)
copper pads.
相關(guān)PDF資料 |
PDF描述 |
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| 1N5818RL | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5819RL | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5818 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5818 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5818 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5818A-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:Schottky Barrier Rectifiers |
| 1N5818-B | 功能描述:肖特基二極管與整流器 Vr/30V Io/1A BULK RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| 1N5818B-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:Schottky Barrier Rectifiers |
| 1N5818-BP | 制造商:Micro Commercial Components (MCC) 功能描述:1N5818 Series 1 A 30 V Through-Hole Schottky Barrier Rectifier - DO-41 |
| 1N5818-E | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current 1.0A |
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