參數(shù)資料
型號: 10FWJ2C48M
元件分類: 整流器
英文描述: 10 A, 30 V, SILICON, RECTIFIER DIODE
封裝: 12-10D1A, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 273K
代理商: 10FWJ2C48M
10FWJ2C48M,U10FWJ2C48M
2004-07-07
2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
VFM
IFM=5A
0.47
V
Repetitive Peak Reverse
Current
IRRM
VRRM=30V
3.5
mA
Junction Capacitance
Cj
VR=10V, f=1.0MHz
290
pF
Thermal Resistance
Rth (j-c)
Total DC, Junction to Case
2.2
°C / W
VFM, IRRM, Cj : A Value of one cell.
MARKING
Abbreviation Code
Part No.
10FWJ2C
10FWJ2C48M
10FWJ2C
U10FWJ2C48M
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
The maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded
during operation, even for an instant. The following are the general derating methods that we recommend when
you design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
IO:
We recommend that the worst case current be no greater than 80% of the maximum rating of IO and
Tj be below 100°C. When using this device, take the margin into consideration by using an
allowable Tamax-IO curve.
IFSM:
This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj:
Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a Tj of below 100°C.
Please refer to the Rectifiers databook for further information.
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
10FWJ2C
Characteristics
indicator
Part No. (or abbreviation code)
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