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參數(shù)資料
| 型號(hào)： | 10JL2CZ47 |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | LEAD FREE, 12-10C1A, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 248K |
| 代理商： | 10JL2CZ47 |
10JL2CZ47
2006-11-08
1
Unit: mm
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
10JL2CZ47
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
: VRRM = 600 V
Average Output Rectified Current
: IO = 10 A
Ultra Fast ReverseRecovery Time : trr = 50 ns (Max)
Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
600
V
Average Output Rectified Current
IO
10
A
50 (50Hz)
Peak One Cycle Surge Forward
Current (Sine Wave)
IFSM
55 (60Hz)
A
Junction Temperature
Tj
40~150
°C
Storage Temperature Range
Tstg
40~150
°C
Screw Torque
―
0.6
Nm
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
(Note 1)
VFM
IFM = 5A
―
2.0
V
Repetitive Peak Reverse
Current
(Note 1)
IRRM
VRRM = 600V
―
50
A
Reverse Recovery Time
(Note 1)
trr
IF = 2A, di / dt = 20A / s
―
50
ns
Forward Recovery Time
(Note 1)
tfr
IF = 1A
―
150
ns
Thermal Resistance
Rth (jc)
Total DC, Junction to Case
―
3.6
°C / W
Note 1: A value applied to one cell.
POLARITY
JEDEC
―
JEITA
―
TOSHIBA
1210C1A
Weight: 2.0g
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 10KF40 | 10 A, 400 V, SILICON, RECTIFIER DIODE |
| 10KF40B | 10 A, 400 V, SILICON, RECTIFIER DIODE |
| 10KQ30 | 10 A, 30 V, SILICON, RECTIFIER DIODE |
| 10KQ40 | 10 A, 40 V, SILICON, RECTIFIER DIODE |
| 10KQ50 | 10 A, 50 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 10JL2CZ47(F) | 制造商:Toshiba 功能描述:10A 600V TO220NIS Bulk 制造商:Toshiba 功能描述:Diode Switching 600V 10A 3-Pin(3+Tab) TO-220NIS |
| 10JL2CZ47_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SWITCHING MODE POWER SUPPLY APPLICATION |
| 10JL2CZ47A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:HIGH EFFICIENCY DIODE STACK (SWITCHING TYPE POWER SUPPLY APPLICATION) |
| 10JL2CZ47A(F) | 制造商:Toshiba 功能描述:10A 600V TO220NIS Bulk |
| 10JL2CZ47A_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SWITCHING MODE POWER SUPPLY APPLICATION |
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