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參數(shù)資料
| 型號(hào)： | 10FWJ2CZ47M |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 30 V, SILICON, RECTIFIER DIODE |
| 封裝： | LEAD FREE, 12-10C1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 275K |
| 代理商： | 10FWJ2CZ47M |
10FWJ2CZ47M
2006-11-10
1
TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE
10FWJ2CZ47M
LOW FORWARD VOLTAGE SCHOTTKY BARRIER
DIODE
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Peak Forward Voltage: VFM ≤ 0.47V
Repetitive Peak Reverse Voltage: VRRM = 30V
Average Output Rectified Current: IO = 10A
Low Switching Losses and Output Noise.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
30
V
Average Output Rectified Current
IO
10
A
100 (50Hz)
Peak One Cycle Surge Forward
Current (Sine Wave)
IFSM
110 (60Hz)
A
Junction Temperature
Tj
40~125
°C
Storage Temperature Range
Tstg
40~150
°C
Screw Torque
―
0.6
N m
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
(Note 1)
VFM
IFM = 5A
―
0.47
V
Repetitive Peak Reverse Current
(Note 1)
IRRM
VRRM = 30V
―
3.5
mA
Junction Capacitance
(Note 1)
Cj
VR = 10V, f = 1.0MHz
―
290
―
pF
Thermal Resistance
Rth (jc)
Total DC, Junction to Case
―
3.0
°C / W
Note 1: A value applied to one cell.
POLARITY
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
12-10C1A
Weight: 2.0 g (typ.)
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