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參數(shù)資料
| 型號： | 08090 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射頻功率場效應晶體管90瓦，869-960兆赫 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 205K |
| 代理商： | 08090 |
Data Sheet
1
2004-04-05
PTF080901E
Package 30248
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
36
38
40
42
44
46
48
50
Output Power (dBm)
Modula
tion
Spec
trum
(dB)
10
15
20
25
30
35
40
45
50
55
Drain
Efficiency
(%)
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz
Efficiency
400 kHz
600 kHz
PTF080901
LDMOS RF Power Field Effect Transistor
90 W, 869–960 MHz
Features
Broadband internal matching
Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 700 mA, POUT = 45 W, f = 959.8 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Error Vector Magnitude
EVM (RMS)
—
2.5
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–62
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–74
—
dBc
Gain
Gps
—
18
—
dB
Drain Efficiency
η
D
—
40
—
%
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 650 mA, POUT = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
17
18
—
dB
Drain Efficiency
η
D
40
42
—
%
Intermodulation Distortion
IMD
—
–32
–29
dBc
PTF080901F
Package 31248
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