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參數(shù)資料
| 型號： | 08090 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射頻功率場效應晶體管90瓦，869-960兆赫 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 205K |
| 代理商： | 08090 |
Data Sheet
2
2004-04-05
PTF080901
Typical Performance (measurements taken in production test fixture)
Modulation Spectrum
POUT = 40 W, f = 959.8 MHz
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
0.47
0.57
0.67
0.77
0.87
0.97
Quiescent Current (A)
EVM
RMS
(average
%)
.
-100
-90
-80
-70
-60
-50
-40
-30
-20
Modula
tion
Spec
trum
(dBc)
EVM
400 KHz
600 KHz
0
1
2
3
4
5
6
7
8
9
36
38
40
42
44
46
48
50
Output Power (dBm)
EVM
RMS
(average
%)
.
0
10
20
30
40
50
60
70
80
90
Drain
Efficiency
(%)
EDGE EVM Performance
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz
EVM
Efficiency
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
VGS = 0 V, IDS = 10 A
V(BR)DSS
65
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
1.0
A
On–State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.1
—
V
Operating Gate Voltage
VDS = 28 V, IDQ = 650 mA
VGS
2.5
3.2
4
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
1.0
A
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
V
Gate–Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
335
W
Above 25°C derate by
1.9
W/°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RθJC
0.52
°C/W
All published data at TCASE = 25°C unless otherwise indicated.
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