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參數(shù)資料
| 型號(hào)： | 08090 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射頻功率場(chǎng)效應(yīng)晶體管90瓦，869-960兆赫 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | 08090 |
Data Sheet
3
2004-04-05
PTF080901
-80
-70
-60
-50
-40
-30
-20
-10
0
43
45
47
49
51
Output Power (dBm), PEP
IMD
(dBc)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 650 mA, f1 = 959 MHz, f2 = 960 MHz
3rd Order
7th
5th
14
15
16
17
18
860
880
900
920
940
960
Frequency (MHz)
Gain
(dB)
40
50
60
70
80
Efficiency
(%),
P
OUT
(dBm)
Output Pow er
Efficiency
Gain
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
VDD = 28 V, IDQ = 650 mA
Typical Performance (cont.)
All published data at TCASE = 25°C unless otherwise indicated.
IM3 vs. Output Power at Selected Biases
VDD = 28 V, f1 = 959, f2 = 960 MHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
39
41
43
45
47
49
51
Output Power (dBm), PEP
IMD
(dBc)
480 mA
820 mA
650 mA
Broadband Performance
VDD = 28 V, IDQ = 650 mA, POUT = 45 W
10
20
30
40
50
60
860
880
900
920
940
960
Frequency (MHz)
Gain
(dB),
Efficiency
(%)
-15
-12
-9
-6
-3
0
Return
Loss
(dB)
Gain
Return Loss
Efficiency
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