參數(shù)資料
型號： μPD4564163
廠商： NEC Corp.
英文描述： 64M-bit Synchronous DRAM(64M同步動(dòng)態(tài)RAM)
中文描述： 6400位同步DRAM（6400同步動(dòng)態(tài)RAM）的
文件頁數(shù)： 9/84頁
文件大?。?/td> 697K
代理商： ΜPD4564163
9
μ
PD4564441, 4564841, 4564163 for Rev. E
13. Electrical Specifications .................................................................................................................. 34
13.1
AC Parameters for Read Timing ......................................................................................................... 39
13.2
AC Parameters for Write Timing ......................................................................................................... 41
13.3
Relationship between Frequency and Latency .................................................................................. 42
13.4
Mode Register Write ............................................................................................................................. 43
13.5
Power on Sequence and Auto Refresh .............................................................................................. 44
13.6
/CS Function ......................................................................................................................................... 45
13.7
Clock Suspension during Burst Read (using CKE Function) .......................................................... 46
13.8
Clock Suspension during Burst Write (using CKE Function) .......................................................... 48
13.9
Power Down Mode and Clock Mask ................................................................................................... 50
13.10 CBR Refresh ......................................................................................................................................... 51
13.11 Self Refresh (Entry and Exit) ............................................................................................................... 52
13.12 Random Column Read (Page with Same Bank) ................................................................................ 53
13.13 Random Column Write (Page with Same Bank) ................................................................................ 55
13.14 Random Row Read (Ping-Pong Banks) ............................................................................................. 57
13.15 Random Row Write (Ping-Pong Banks) ............................................................................................. 59
13.16 Read and Write ..................................................................................................................................... 61
13.17 Interleaved Column Read Cycle .......................................................................................................... 63
13.18 Interleaved Column Write Cycle .......................................................................................................... 65
13.19 Auto Precharge after Read Burst ........................................................................................................ 67
13.20 Auto Precharge after Write Burst ........................................................................................................ 69
13.21 Full Page Read Cycle ........................................................................................................................... 71
13.22 Full Page Write Cycle ........................................................................................................................... 73
13.23 Byte Write Operation ............................................................................................................................ 75
13.24 Burst Read and Single Write (Option) ................................................................................................ 76
13.25 Full Page Random Column Read ........................................................................................................ 77
13.26 Full Page Random Column Write ........................................................................................................ 78
13.27 PRE (Precharge) Termination of Burst ............................................................................................... 79
14. Package Drawing ............................................................................................................................. 81
15. Recommended Soldering Conditions ............................................................................................ 82
相關(guān)PDF資料
PDF描述
μPD4564441 64M-bit Synchronous DRAM(64M同步動(dòng)態(tài)RAM)
μPD4564841 64M-bit Synchronous DRAM(64M同步動(dòng)態(tài)RAM)
μPD4564323 64M-bit Synchronous DRAM(64M 同步動(dòng)態(tài)RAM)
μPD45D128164 128 M-bit Synchronous DRAM with Double Data Rate(128 同步動(dòng)態(tài)RAM)
μPD45D128442 128 M-bit Synchronous DRAM with Double Data Rate(128 同步動(dòng)態(tài)RAM)
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