參數(shù)資料
型號(hào)： μPD4564163
廠商： NEC Corp.
英文描述： 64M-bit Synchronous DRAM(64M同步動(dòng)態(tài)RAM)
中文描述： 6400位同步DRAM（6400同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 34/84頁(yè)
文件大?。?/td> 697K
代理商： ΜPD4564163
34
μ
PD4564441, 4564841, 4564163 for Rev. E
13. Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 100
μ
s and then, execute
Power on sequence and Auto Refresh
before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
V
CC
, V
CC
Q
0.5 to +4.6
V
Voltage on any pin relative to GND
V
T
0.5 to +4.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
1
W
Operating ambient temperature
T
A
0 to 70
°
C
Storage temperature
T
stg
55 to + 125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
, V
CC
Q
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+0.3
Note1
V
Low level input voltage
V
IL
0.3
Note2
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Notes 1.
V
IH(MAX.)
= V
CC
+ 1.5
V (Pulse width
≤
5 ns)
2.
V
IL(MIN.)
= –1.5
V (Pulse width
≤
5 ns)
Pin Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A13
2.5
4
pF
C
I2
CLK, CKE, /CS, /RAS, /CAS, /WE,
DQM, UDQM, LDQM
2.5
4
Data input / output capacitance
C
I/O
DQ0 - DQ15
4
6.5
pF
#
#
相關(guān)PDF資料
PDF描述
μPD4564441 64M-bit Synchronous DRAM(64M同步動(dòng)態(tài)RAM)
μPD4564841 64M-bit Synchronous DRAM(64M同步動(dòng)態(tài)RAM)
μPD4564323 64M-bit Synchronous DRAM(64M 同步動(dòng)態(tài)RAM)
μPD45D128164 128 M-bit Synchronous DRAM with Double Data Rate(128 同步動(dòng)態(tài)RAM)
μPD45D128442 128 M-bit Synchronous DRAM with Double Data Rate(128 同步動(dòng)態(tài)RAM)
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