參數(shù)資料
型號(hào)： μPD45256841
廠(chǎng)商： NEC Corp.
英文描述： 256M-Bit Synchronous DRAM(256M 同步 動(dòng)態(tài)RAM)
中文描述： 256M位同步DRAM（256M同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 34/84頁(yè)
文件大?。?/td> 1052K
代理商： ΜPD45256841
34
μ
PD45256441,45256841,45256163
Preliminary Data Sheet
13. Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 100
μ
s and then, execute
Power on sequence and Auto Refresh
before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND V
CC
,
V
CC
Q
–0.5 to +4.6
V
Voltage on input pin relative to GND
V
T
–0.5 to +4.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
1
W
Operating ambient temperature
T
A
0 to +70
°
C
Storage temperature
T
stg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
,
V
CC
Q
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+0.3
V
Low level input voltage
V
IL
–0.3
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I1
A0 - A12, BA0, BA1
2.5
4
pF
C
I2
CLK, CKE, /CS, /RAS, /CAS,
/WE, DQM, UDQM, LDQM
2.5
4
Data input/output capacitance
C
I/O
DQ0 - DQ15
4
6.5
pF
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