參數(shù)資料
型號： μPD45256841
廠商： NEC Corp.
英文描述： 256M-Bit Synchronous DRAM(256M 同步 動態(tài)RAM)
中文描述： 256M位同步DRAM（256M同步動態(tài)RAM）的
文件頁數(shù)： 16/84頁
文件大?。?/td> 1052K
代理商： ΜPD45256841
16
μ
PD45256441,45256841,45256163
Preliminary Data Sheet
4.4 Operative Command Table
Note 1
(1/3)
Current state
/CS /RAS /CAS /WE
Address
Command
Action
Notes
Idle
H
x
x
x
x
DESL
Nop or Power down
2
L
H
H
x
x
NOP or BST
Nop or Power down
2
L
H
L
H
BA, CA, A10 READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10 WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
Row activating
L
L
H
L
BA, A10
PRE/PALL
Nop
L
L
L
H
x
REF/SELF
Refresh or Self refresh
4
L
L
L
L
Op-Code
MRS
Mode register accessing
Row active
H
x
x
x
x
DESL
Nop
L
H
H
x
x
NOP or BST
Nop
L
H
L
H
BA, CA, A10 READ/READA
Begin read : Determine AP
5
L
H
L
L
BA, CA, A10 WRIT/WRITA
Begin write : Determine AP
5
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Precharge
6
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Read
H
x
x
x
x
DESL
Continue burst to end
→
Row active
L
H
H
H
x
NOP
Continue burst to end
→
Row active
L
H
H
L
x
BST
Burst stop
→
Row active
L
H
L
H
BA, CA, A10 READ/READA
Term burst, new read: Determine AP
7
L
H
L
L
BA, CA, A10 WRIT/WRITA
Term burst, start write: Determine AP
7, 8
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Term burst, precharging
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Write
H
x
x
x
x
DESL
Continue burst to end
→
Write recovering
L
H
H
H
x
NOP
Continue burst to end
→
Write recovering
L
H
H
L
x
BST
Burst stop
→
Row active
L
H
L
H
BA, CA, A10 READ/READA
Term burst, start read: Determine AP
7, 8
L
H
L
L
BA, CA, A10 WRIT/WRITA
Term burst, new write: Determine AP
7
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
Term burst, precharging
9
L
L
L
H
x
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
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