參數(shù)資料
型號(hào)： μPD42S65405
廠商： NEC Corp.
英文描述： 16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 動(dòng)態(tài)RAM)
中文描述： 16,777,216詞由4位的CMOS動(dòng)態(tài)存儲(chǔ)器（RAM的6400動(dòng)態(tài)）
文件頁(yè)數(shù)： 5/36頁(yè)
文件大?。?/td> 256K
代理商： ΜPD42S65405
μ
PD4264405, 42S65405, 4265405
5
Input/Output
Function
Input
RAS activates the sense amplifier by latching a row address and selecting a
corresponding word line.
It refreshes memory cell array of one line selected by the row address.
It also selects the following function.
CAS before RAS self refresh, CAS before RAS refresh
Input
CAS activates data input/output circuit by latching column address and
selecting a digit line connected with the sense amplifier.
Input
Address bus.
Input total 24-bit of address signal, upper bits and lower bits
Note
in sequence
(address multiplex method).
Therefore, one word is selected from 16,777,216-word by 4-bit memory cell
array.
In actual operation, latch row address by specifying row address and
activating RAS.
Then, switch the address bus to column address and activate CAS.
Each address is taken into the device when RAS and CAS are activated.
Therefore, the address input setup time (t
ASR
, t
ASC
) and hold time (t
RAH
, t
CAH
)
are specified for the activation of RAS and CAS.
Input
Write control signal.
Write operation is executed by activating RAS, CAS and WE.
Input
Read control signal.
Read operation can be executed by activating RAS, CAS and OE.
If WE is activated during read operation, OE is to be ineffective in the device.
Therefore, read operation cannot be executed.
Input/Output
4-bit data bus.
I/O1 to I/O4 are used to input/output data.
Pin name
RAS
(Row address strobe)
CAS
(Column address strobe)
A0 to A
×
Note
(Address inputs)
WE
(Write enable)
OE
(Output enable)
I/O1 to I/O4
(Data inputs/outputs)
Input/Output Pin Functions
The
μ
PD4264405, 42S65405, 4265405 have input pins RAS, CAS, WE, OE, Address
Note
and input/output
pins I/O1 to I/O4.
Note
Part number
Address inputs
Upper bits
Lower bits
μ
PD4264405
A0 - A12
13
11
μ
PD42S65405, 4265405
A0 - A11
12
12
相關(guān)PDF資料
PDF描述
μPD4264405 16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 動(dòng)態(tài)RAM)
μPD4265405 16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 動(dòng)態(tài)RAM)
μPD42S65805 8,388,608 Words by 8 Bits CMOS dynamic RAMs(64M 動(dòng)態(tài)RAM)
μPD4264805 8,388,608 Words by 8 Bits CMOS dynamic RAMs(64M 動(dòng)態(tài)RAM)
μPD4265805 8,388,608 Words by 8 Bits CMOS dynamic RAMs(64M 動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PD430 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC
PD4306 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOK Dual SCR Isolated Module (600 Amperes / Up to 2400 Volts)
PD430607 功能描述:SCR MOD ISO DUAL 600V 700A RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> SCR 系列:- 其它有關(guān)文件:SCR Module Selection Guide 標(biāo)準(zhǔn)包裝:10 系列:- 結(jié)構(gòu):串聯(lián) - SCR/二極管 SCR 數(shù)目，二極管:1 SCR，1 個(gè)二極管 電壓 - 斷路:1600V 電流 - 柵極觸發(fā)電流 (Igt)（最大）:150mA 電流 - 導(dǎo)通狀態(tài) (It (AV))（最大）:95A 電流 - 導(dǎo)通狀態(tài) (It (RMS))（最大）:210A 電流 - 非重復(fù)電涌，50、60Hz (Itsm):1785A，1870A 電流 - 維持(Ih):250mA 安裝類(lèi)型:底座安裝 封裝/外殼:ADD-A-PAK（3 + 2） 包裝:散裝 其它名稱:*IRKL92/16AIRKL92/16IRKL92/16-ND
PD4307 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts)
PD430807 功能描述:SCR MOD ISO DUAL 800V 700A RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> SCR 系列:- 其它有關(guān)文件:SCR Module Selection Guide 標(biāo)準(zhǔn)包裝:10 系列:- 結(jié)構(gòu):串聯(lián) - SCR/二極管 SCR 數(shù)目，二極管:1 SCR，1 個(gè)二極管 電壓 - 斷路:1600V 電流 - 柵極觸發(fā)電流 (Igt)（最大）:150mA 電流 - 導(dǎo)通狀態(tài) (It (AV))（最大）:95A 電流 - 導(dǎo)通狀態(tài) (It (RMS))（最大）:210A 電流 - 非重復(fù)電涌，50、60Hz (Itsm):1785A，1870A 電流 - 維持(Ih):250mA 安裝類(lèi)型:底座安裝 封裝/外殼:ADD-A-PAK（3 + 2） 包裝:散裝 其它名稱:*IRKL92/16AIRKL92/16IRKL92/16-ND
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*