參數(shù)資料
型號: μPD42S18165L
廠商: NEC Corp.
英文描述: 16M-bit CMOS dynamic RAMs(16M位CMOS 動態(tài)RAM)
中文描述: 1,600位CMOS動態(tài)存儲器(1,600位的CMOS動態(tài)內存)
文件頁數(shù): 44/48頁
文件大小: 468K
代理商: ΜPD42S18165L
PD42S18165L, 4218165L
44
Recommended Soldering Conditions
The following conditions (see tables below and next page) must be met for soldering conditions of the
PD42S18165L, 4218165L.
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Please consult with our sales offices in case other soldering process is used, or in case the soldering is done
under different conditions.
Types of Surface Mount Device
PD42S18165LG5-7JF, 4218165LG5-7JF: 50-pin plastic TSOP (
II
) (400 mil)
μ
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak temperature of package surface: 235
°
C or lower,
Reflow time: 30 seconds or less (210
°
C or higher),
Number of reflow processes: MAX. 3
Exposure limit: 7 days
Note
(10 hours pre-baking is required at 125
°
C afterwards)
IR35-107-3
VPS
Peak temperature of package: 215
°
C or lower,
Reflow time: 40 seconds or less (200
°
C or higher),
Number of reflow processes: MAX. 3
Exposure limit: 7 days
Note
(10 hours pre-baking is required at 125
°
C afterwards)
VP15-107-3
Partial heating method
Terminal temperature: 300
°
C or lower,
Time: 3 seconds or lower (Per side of the package).
Note
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25
°
C and relative humidity at 65 % or less.
Caution
Do not apply more than one soldering method at any one time, except for “Partial heating
method”.
μ
相關PDF資料
PDF描述
μPD4218165 16M- bit CMOS dynamic RAMs(16M CMOS 動態(tài)RAM)
μPD42S18165 16M- bit CMOS dynamic RAMs(16M CMOS 動態(tài)RAM)
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μPD4265400 64 M-Bit Dynamic RAM(64M 動態(tài)RAM)
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