
1995
DATA SHEET
MOS INTEGRATED CIRCUIT
Description
The
μ
PD42S17805, 4217805 are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO.
EDO is a kind of the page mode and is useful for the read operation.
Besides, the
μ
PD42S17805 can execute CAS before RAS self refresh.
The
μ
PD42S17805, 4217805 are packaged in 28-pin plastic TSOP (
II
) and 28-pin plastic SOJ.
Features
EDO (Hyper page mode)
2,097,152 words by 8 bits organization
Single +5.0 V
±
10 % power supply
Fast access and cycle time
Power
consumption
Active (MAX.)
Access time
(MAX.)
R/W cycle time
(MIN.)
EDO
(Hyper page mode)
cycle time
(MIN.)
Part number
μ
PD42S17805-50, 4217805-50
660 mW
50 ns
84 ns
20 ns
μ
PD42S17805-60, 4217805-60
605 mW
60 ns
104 ns
25 ns
μ
PD42S17805-70, 4217805-70
550 mW
70 ns
124 ns
30 ns
The
μ
PD42S17805 can execute CAS before RAS self refresh
Part number
Refresh cycle
Refresh
Power consumption
at standby (MAX.)
μ
PD42S17805
2,048 cycles/128 ms
CAS before RAS self refresh,
CAS before RAS refresh,
RAS only refresh, Hidden refresh
1.4 mW
(CMOS level input)
μ
PD4217805
2,048 cycles/32 ms
CAS before RAS refresh,
RAS only refresh,
Hidden refresh
5.5 mW
(CMOS level input)
μ
PD42S17805, 4217805
16 M-BIT DYNAMIC RAM
2 M-WORD BY 8-BIT, EDO
The mark
shows major revised points.
Document No. M10069EJ5V0DS00 (5th edition)
Date Published January 1997 N
Printed in Japan
The information in this document is subject to change without notice.