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參數(shù)資料
| 型號： | μPA840TC |
| 廠商： | NEC Corp. |
| 英文描述： | NPN Silicon RF Twin Transistor(NPN射頻晶體管) |
| 中文描述： | NPN硅射頻雙晶體管（npn型射頻晶體管） |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 79K |
| 代理商： | ΜPA840TC |
Data Sheet P14556EJ1V0DS00
2
μ
PA840TC
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Ratings
Parameter
Symbol
Q1
Q2
Unit
Collector to Base Voltage
V
CBO
9
20
V
Collector to Emitter Voltage
V
CEO
6
10
V
Emitter to Base Voltage
V
EBO
2
1.5
V
Collector Current
I
C
30
65
mA
Total Power Dissipation
P
T
Note
180 in 1 element
200 in 1 element
mW
230 in 2 elements
Junction Temperature
T
j
150
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm glass epoxy substrate.
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
(1) Q1
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 10 mA
Note 1
75
150
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
10.0
12.0
GHz
Feedback Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.7
pF
Insertion Power Gain
|
S
21e
|
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
7.0
8.5
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
1.5
2.5
dB
Notes 1.
Pulse Measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
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