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參數(shù)資料
| 型號(hào)： | ZXTCM322TA |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 4A I(C) | LLCC |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 4A條一（c）| LLCC |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 178K |
| 代理商： | ZXTCM322TA |
ZXTCM322
ISSUE 2 - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
100
190
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
50
65
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
7.5
8.2
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
25
nA
V
CB
=80V
Emitter Cut-Off Current
I
EBO
25
nA
V
EB
=6V
Collector Emitter Cut-Off Current
I
CES
25
nA
V
CES
=40V
Collector-Emitter Saturation
Voltage
V
CE(sat)
10
70
145
115
225
270
20
100
200
220
300
320
mV
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=50mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=3A, I
B
=100mA*
I
C
=4A, I
B
=200mA*
Base-Emitter Saturation Voltage
V
BE(sat)
1.00
1.05
V
I
C
=4A, I
B
=200mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.94
1.00
V
I
C
=4A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
200
300
200
100
400
450
400
225
40
I
C
=10mA, V
CE
=2V*
I
C
=0.2A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
100
165
MHz
I
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
12
20
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
170
ns
V
CC
=10V, I
=1A
I
B1
=I
B2
=10mA
Turn-Off Time
t
(off)
750
ns
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
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