參數(shù)資料
型號: ZXT1M322TA
英文描述: TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 4A I(C) | SMT
中文描述: 晶體管|晶體管|進(jìn)步黨| 12V的五(巴西)總裁| 4A條一(c)|貼片
文件頁數(shù): 2/6頁
文件大?。?/td> 181K
代理商: ZXT1M322TA
ZXT1M322
ISSUE 2 - JUNE 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θ
JA
83
°C/W
Junction to Ambient (b)
R
θ
JA
51
°C/W
Junction to Ambient (d)
R
θ
JA
125
°C/W
Junction to Ambient (e)
R
θ
JA
42
°C/W
THERMAL RESISTANCE
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions
with all exposed pads attached
.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t 5 secs
with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions
with minimal lead connections only
.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions
with all exposed pads attached
.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the
package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300°C/W giving a power rating of Ptot=420mW.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-7.5
V
Peak Pulse Current
I
CM
-12
A
Continuous Collector Current (a)
I
C
-4
A
Base Current
I
B
-1000
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (d)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at TA=25°C (e)
Linear Derating Factor
P
D
3
24
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.
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