參數(shù)資料
型號: ZXT1M322TA
英文描述: TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 4A I(C) | SMT
中文描述: 晶體管|晶體管|進步黨| 12V的五(巴西)總裁| 4A條一(c)|貼片
文件頁數(shù): 1/6頁
文件大?。?/td> 181K
代理商: ZXT1M322TA
SUMMARY
V
CEO
= -12V; R
SAT
= 60m ; I
C
= -4A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4
th
generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other
key benefits
:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage
(-140mV@ -1A)
hFEspecified up to -10A
IC= -4A Continuous Collector Current
2mm x 2mm MLP
APPLICATIONS
DC - DC Converters (FET Driving)
Charging Circuits
Power switches
ORDERING INFORMATION
Motor control
DEVICE MARKING
S1
ZXT1M322
ISSUE 2 - JUNE 2002
1
MPPS Miniature Package Power Solutions
12V PNP LOW SATURATION SWITCHING TRANSISTOR
DEVICE
REEL
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
ZXT1M322TA
ZXT1M322TC
7
13
2mm x 2mm Single MLP
underside view
PINOUT
B
C
E
2mm x 2mm MLP
(single die)
相關PDF資料
PDF描述
ZXT1M322TC TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 4A I(C) | SMT
ZXT951K2
ZXT953K2
ZXTBM322TC TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 4.5A I(C) | LLCC
ZXTBM322
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