參數(shù)資料
型號： ZXMP62M832(1)
文件頁數(shù)： 4/7頁
文件大?。?/td> 284K
代理商： ZXMP62M832(1)
ZXMP62M832
PROVISIONAL ISSUE A - MAY 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
-20
V
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-20V, V
GS
=0V
V
GS
=
12V, V
DS
=0V
I
D
=-250 A, V
DS
= V
GS
V
GS
=-4.5V, I
D
=-0.61A
V
GS
=-2.7V, I
D
=-0.31A
V
DS
=-10V,I
D
=-0.31A
Zero Gate Voltage Drain Current
-1
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
-0.7
V
S
Static Drain-Source On-State Resistance
(1)
0.6
0.9
Forward Transconductance (1)(3)
g
fs
0.56
DYNAMIC
(3)
Input Capacitance
C
iss
C
oss
C
rss
150
pF
V
DS
=-15V, V
GS
=0V,
f=1MHz
Output Capacitance
70
pF
Reverse Transfer Capacitance
30
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.9
ns
V
DD
=-10V, I
D
=-0.93A
R
=6.0
, R
(Refer to test circuit)
Rise Time
6.7
ns
Turn-Off Delay Time
11.2
ns
Fall Time
10.2
ns
Total Gate Charge
5.2
3.5
nC
V
DS
=-16V,V
GS
=-4.5V,
I
D
=-0.61A
(Refer to test circuit)
Gate-Source Charge
0.5
nC
Gate-Drain Charge
1.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
J
=25°C, I
S
=-0.61A,
V
GS
=0V
T
J
=25°C, I
F
=-0.61A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
t
rr
Q
rr
14.9
ns
Reverse Recovery Charge (3)
5.6
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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