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參數(shù)資料
| 型號： | ZXMP62M832(1) |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 284K |
| 代理商： | ZXMP62M832(1) |
ZXMP62M832
PROVISIONAL ISSUE A - MAY 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(f)
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
83.3
°C/W
Junction to Ambient (b)(f)
51
°C/W
Junction to Ambient (c)(f)
125
°C/W
Junction to Ambient (d)(f)
111
°C/W
Junction to Ambient (d)(g)
73.5
°C/W
Junction to Ambient (e)(g)
41.7
°C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached
. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached
. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
PARAMETER
SYMBOL
P-Channel
UNIT
Drain-Source Voltage
V
DSS
V
GS
I
D
-20
V
Gate-Source Voltage
12
V
Continuous Drain Current@V
GS
=10V; T
A
=25 C (b)(f)
@V
GS
=10V; T
A
=70 C (b)(f)
@V
GS
=10V; T
A
=25 C (a)(f)
Pulsed Drain Current
-1.6
-1.3
-1.3
A
A
A
I
DM
I
S
I
SM
P
D
-5.6
A
Continuous Source Current (Body Diode)(b)(f)
-2.7
A
Pulsed Source Current (Body Diode)
-5.6
A
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
P
D
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
P
D
1.13
8
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
P
D
3
24
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.
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